Al2O3單晶（Sapphire,又稱白寶石，藍(lán)寶石）有著很好的熱特性，極好的電氣特性和介電特性，并且防化學(xué)腐蝕，它耐高溫，導(dǎo)熱好，硬度高，透紅外，化學(xué)穩(wěn)定性好。廣泛用于耐高溫紅外窗口材料和III-V族氮化物及多種外延薄膜基片材料。
晶體結(jié)構(gòu) 六方 a =4.758 Å c= 12.992 Å 結(jié)晶方向 (11-20 ) - a plane: 2.379 Å (1-102) - r plane: 1.740 Å (10-10) - m plane: 1.375 Å (0001) - c plane: 2.165 Å 單晶純度 > 99.99% 熔點(diǎn) 2040 oC 密度 3.98 g/cm3 硬度 9 ( mohs) 熱膨脹 7.5 (x10-6/ oC) 熱容 0.10( cal / oC) 熱導(dǎo) 46.06 @ 0 oC 25.12 @ 100 oC, 12.56 @ 400 oC ( W/(m.K) ) 介電常數(shù) ~ 9.4 @300K at A axis ~ 11.58@ 300K at C axis 正切損耗 < 2x10-5 at A axis , <5 x10-5 at C axis
#p#分頁標(biāo)題#e#
技術(shù)參數(shù)：
晶體結(jié)構(gòu)
六方 a =4.758 Å c= 12.992 Å
結(jié)晶方向
(11-20 ) - a plane: 2.379 Å (1-102) - r plane: 1.740 Å
(10-10) - m plane: 1.375 Å (0001) - c plane: 2.165 Å
單晶純度
> 99.99%
熔點(diǎn)
2040 oC
密度
3.98 g/cm3
硬度
9 ( mohs)
熱膨脹
7.5 (x10-6/ oC)
熱容
0.10( cal / oC)
熱導(dǎo)
46.06 @ 0 oC 25.12 @ 100 oC, 12.56 @ 400 oC ( W/(m.K) )
介電常數(shù)
~ 9.4 @300K at A axis ~ 11.58@ 300K at C axis
正切損耗
< 2x10-5 at A axis , <5 x10-5 at C axis
晶體結(jié)構(gòu) 六方 a =4.758 Å c= 12.992 Å 結(jié)晶方向 (11-20 ) - a plane: 2.379 Å (1-102) - r plane: 1.740 Å (10-10) - m plane: 1.375 Å (0001) - c plane: 2.165 Å 單晶純度 > 99.99% 熔點(diǎn) 2040 oC 密度 3.98 g/cm3 硬度 9 ( mohs) 熱膨脹 7.5 (x10-6/ oC) 熱容 0.10( cal / oC) 熱導(dǎo) 46.06 @ 0 oC 25.12 @ 100 oC, 12.56 @ 400 oC ( W/(m.K) ) 介電常數(shù) ~ 9.4 @300K at A axis ~ 11.58@ 300K at C axis 正切損耗 < 2x10-5 at A axis , <5 x10-5 at C axis
晶體結(jié)構(gòu) 六方 a =4.758 Å c= 12.992 Å 結(jié)晶方向 (11-20 ) - a plane: 2.379 Å (1-102) - r plane: 1.740 Å (10-10) - m plane: 1.375 Å (0001) - c plane: 2.165 Å 單晶純度 > 99.99% 熔點(diǎn) 2040 oC 密度 3.98 g/cm3 #p#分頁標(biāo)題#e# 硬度 9 ( mohs) 熱膨脹 7.5 (x10-6/ oC) 熱容 0.10( cal / oC) 熱導(dǎo) 46.06 @ 0 oC 25.12 @ 100 oC, 12.56 @ 400 oC ( W/(m.K) ) 介電常數(shù) ~ 9.4 @300K at A axis ~ 11.58@ 300K at C axis 正切損耗 < 2x10-5 at A axis , <5 x10-5 at C axis
技術(shù)參數(shù)：
晶體結(jié)構(gòu) 六方 a =4.758 Å c= 12.992 Å 結(jié)晶方向 (11-20 ) - a plane: 2.379 Å (1-102) - r plane: 1.740 Å (10-10) - m plane: 1.375 Å (0001) - c plane: 2.165 Å 單晶純度 > 99.99% 熔點(diǎn) 2040 oC 密度 3.98 g/cm3 硬度 9 ( mohs) 熱膨脹 7.5 (x10-6/ oC) 熱容 0.10( cal / oC) 熱導(dǎo) 46.06 @ 0 oC 25.12 @ 100 oC, 12.56 @ 400 oC ( W/(m.K) ) 介電常數(shù) ~ 9.4 @300K at A axis ~ 11.58@ 300K at C axis 正切損耗 < 2x10-5 at A axis , <5 x10-5 at C axis
#p#分頁標(biāo)題#e#
技術(shù)參數(shù)：
晶體結(jié)構(gòu) 六方 a =4.758 Å c= 12.992 Å 結(jié)晶方向 (11-20 ) - a plane: 2.379 Å (1-102) - r plane: 1.740 Å (10-10) - m plane: 1.375 Å (0001) - c plane: 2.165 Å 單晶純度 > 99.99% 熔點(diǎn) 2040 oC 密度 3.98 g/cm3 硬度 9 ( mohs) 熱膨脹 7.5 (x10-6/ oC) 熱容 0.10( cal / oC) 熱導(dǎo) 46.06 @ 0 oC 25.12 @ 100 oC, 12.56 @ 400 oC ( W/(m.K) ) 介電常數(shù) ~ 9.4 @300K at A axis ~ 11.58@ 300K at C axis 正切損耗 < 2x10-5 at A axis , <5 x10-5 at C axis
技術(shù)參數(shù)：
晶體結(jié)構(gòu) 六方 a =4.758 Å c= 12.992 Å 結(jié)晶方向 (11-20 ) - a plane: 2.379 Å (1-102) - r plane: 1.740 Å (10-10) - m plane: 1.375 Å (0001) - c plane: 2.165 Å 單晶純度 > 99.99% 熔點(diǎn) 2040 oC 密度 3.98 g/cm3 #p#分頁標(biāo)題#e# 硬度 9 ( mohs) 熱膨脹 7.5 (x10-6/ oC) 熱容 0.10( cal / oC) 熱導(dǎo) 46.06 @ 0 oC 25.12 @ 100 oC, 12.56 @ 400 oC ( W/(m.K) ) 介電常數(shù) ~ 9.4 @300K at A axis ~ 11.58@ 300K at C axis 正切損耗 < 2x10-5 at A axis , <5 x10-5 at C axis
技術(shù)參數(shù)：
轉(zhuǎn)載請注明出處。
相關(guān)文章
熱門資訊
精彩導(dǎo)讀
關(guān)注我們
